IRL5602S MOSFET Transistor

The IRL5602S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL5602S transistor as follows.

IRL5602S Transistor Specification

Transistor Code		IRL5602S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		44nC

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