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IRL530PBF MOSFET Transistor

The IRL530PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL530PBF transistor as follows.

Circuit diagram symbol of the IRL530PBF transistor

IRL530PBF Transistor Specification

Transistor Code IRL530PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 88W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 2V

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