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IRL530NLPBF MOSFET Transistor

The IRL530NLPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL530NLPBF transistor as follows.

Circuit diagram symbol of the IRL530NLPBF transistor

IRL530NLPBF Transistor Specification

Transistor Code IRL530NLPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO262
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 79W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 53nS
Gate-Threshold Voltage (Maximum) 2V

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