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IRHYS67230CM MOSFET Transistor

The IRHYS67230CM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHYS67230CM transistor as follows.

Circuit diagram symbol of the IRHYS67230CM transistor

IRHYS67230CM Transistor Specification

Transistor Code IRHYS67230CM
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO257AA
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 206pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4V

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