IRHYB67134CM MOSFET Transistor

The IRHYB67134CM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHYB67134CM transistor as follows.

IRHYB67134CM Transistor Specification

Transistor Code		IRHYB67134CM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V

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