IRHYB597Z30CM MOSFET Transistor

The IRHYB597Z30CM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHYB597Z30CM transistor as follows.

IRHYB597Z30CM Transistor Specification

Transistor Code		IRHYB597Z30CM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		980pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V

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