IRHYB597034CM MOSFET Transistor

The IRHYB597034CM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHYB597034CM transistor as follows.

IRHYB597034CM Transistor Specification

Transistor Code		IRHYB597034CM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.087Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		565pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		4V

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