IRHY57133CMSE MOSFET Transistor

The IRHY57133CMSE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHY57133CMSE transistor as follows.

IRHY57133CMSE Transistor Specification

Transistor Code		IRHY57133CMSE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	130V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4.5V

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