IRHY57130CM MOSFET Transistor

The IRHY57130CM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHY57130CM transistor as follows.

IRHY57130CM Transistor Specification

Transistor Code		IRHY57130CM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V

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