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IRHSNA57064 MOSFET Transistor

The IRHSNA57064 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHSNA57064 transistor as follows.

Circuit diagram symbol of the IRHSNA57064 transistor

IRHSNA57064 Transistor Specification

Transistor Code IRHSNA57064
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD-2
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0065Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 125°C
Rise Time 125nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 160nC

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