IRHSNA57064 MOSFET Transistor

The IRHSNA57064 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHSNA57064 transistor as follows.

IRHSNA57064 Transistor Specification

Transistor Code		IRHSNA57064
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		125°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		160nC

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