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IRHQ9110 MOSFET Transistor

The IRHQ9110 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ9110 transistor as follows.

Circuit diagram symbol of the IRHQ9110 transistor

IRHQ9110 Transistor Specification

Transistor Code IRHQ9110
Transistor Type MOSFET
Control Channel Type P-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 12W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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