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IRHQ6110 MOSFET Transistor

The IRHQ6110 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ6110 transistor as follows.

Circuit diagram symbol of the IRHQ6110 transistor

IRHQ6110 Transistor Specification

Transistor Code IRHQ6110
Transistor Type MOSFET
Control Channel Type NP-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3(2.3)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6(1.1)Ohm
Power Dissipation (Maximum) PD 12W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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