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IRHQ597110 MOSFET Transistor

The IRHQ597110 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ597110 transistor as follows.

Circuit diagram symbol of the IRHQ597110 transistor

IRHQ597110 Transistor Specification

Transistor Code IRHQ597110
Transistor Type MOSFET
Control Channel Type P-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.96Ohm
Power Dissipation (Maximum) PD 12W
Drain-Source Capacitance 102pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4V

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