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IRHQ57214SE MOSFET Transistor

The IRHQ57214SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ57214SE transistor as follows.

Circuit diagram symbol of the IRHQ57214SE transistor

IRHQ57214SE Transistor Specification

Transistor Code IRHQ57214SE
Transistor Type MOSFET
Control Channel Type N-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 12W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 4.5V

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