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IRHQ57110 MOSFET Transistor

The IRHQ57110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ57110 transistor as follows.

Circuit diagram symbol of the IRHQ57110 transistor

IRHQ57110 Transistor Specification

Transistor Code IRHQ57110
Transistor Type MOSFET
Control Channel Type N-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 12W
Drain-Source Capacitance 108pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4V

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