IRHNA7Z60 MOSFET Transistor

The IRHNA7Z60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA7Z60 transistor as follows.

IRHNA7Z60 Transistor Specification

Transistor Code		IRHNA7Z60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		4800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		370nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		421nC

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