IRHNA7460SE MOSFET Transistor

The IRHNA7460SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA7460SE transistor as follows.

IRHNA7460SE Transistor Specification

Transistor Code		IRHNA7460SE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.32Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		220nC

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