IRHNA7264SE MOSFET Transistor

The IRHNA7264SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA7264SE transistor as follows.

IRHNA7264SE Transistor Specification

Transistor Code		IRHNA7264SE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		220nC

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