IRHNA67264 MOSFET Transistor

The IRHNA67264 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA67264 transistor as follows.

IRHNA67264 Transistor Specification

Transistor Code		IRHNA67264
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		220nC

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