IRHNA67160 MOSFET Transistor

The IRHNA67160 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA67160 transistor as follows.

IRHNA67160 Transistor Specification

Transistor Code		IRHNA67160
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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