IRHNA597160 MOSFET Transistor

The IRHNA597160 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHNA597160 transistor as follows.

IRHNA597160 Transistor Specification

Transistor Code		IRHNA597160
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.049Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1570pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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