IRHN9130 MOSFET Transistor

The IRHN9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHN9130 transistor as follows.

IRHN9130 Transistor Specification

Transistor Code		IRHN9130
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO276AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V

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