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IRHN7450SE MOSFET Transistor

The IRHN7450SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHN7450SE transistor as follows.

Circuit diagram symbol of the IRHN7450SE transistor

IRHN7450SE Transistor Specification

Transistor Code IRHN7450SE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO276AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.51Ohm
Power Dissipation (Maximum) PD 151W
Drain-Source Capacitance 540pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 4.5V

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