IRHN7130 MOSFET Transistor

The IRHN7130 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHN7130 transistor as follows.

IRHN7130 Transistor Specification

Transistor Code		IRHN7130
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO276AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V

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