IRHN57250SE MOSFET Transistor

The IRHN57250SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHN57250SE transistor as follows.

IRHN57250SE Transistor Specification

Transistor Code		IRHN57250SE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO276AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		628pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4.5V

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