IRHMS57264SE MOSFET Transistor

The IRHMS57264SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMS57264SE transistor as follows.

IRHMS57264SE Transistor Specification

Transistor Code		IRHMS57264SE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	208W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V

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