IRHMK597160 MOSFET Transistor

The IRHMK597160 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMK597160 transistor as follows.

IRHMK597160 Transistor Specification

Transistor Code		IRHMK597160
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		1574pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V

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