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IRHMK57260SE MOSFET Transistor

The IRHMK57260SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMK57260SE transistor as follows.

Circuit diagram symbol of the IRHMK57260SE transistor

IRHMK57260SE Transistor Specification

Transistor Code IRHMK57260SE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO254AA
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 45A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.044Ohm
Power Dissipation (Maximum) PD 208W
Drain-Source Capacitance 900pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 125nS
Gate-Threshold Voltage (Maximum) 4.5V

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