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IRHMK57160 MOSFET Transistor

The IRHMK57160 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMK57160 transistor as follows.

Circuit diagram symbol of the IRHMK57160 transistor

IRHMK57160 Transistor Specification

Transistor Code IRHMK57160
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO254AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 45A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 208W
Drain-Source Capacitance 1620pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 125nS
Gate-Threshold Voltage (Maximum) 4V

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