IRHMJ57160 MOSFET Transistor

The IRHMJ57160 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMJ57160 transistor as follows.

IRHMJ57160 Transistor Specification

Transistor Code		IRHMJ57160
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1583pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		4V

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