IRHMB57Z60 MOSFET Transistor

The IRHMB57Z60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHMB57Z60 transistor as follows.

IRHMB57Z60 Transistor Specification

Transistor Code		IRHMB57Z60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		4334pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		175nS
Gate-Threshold Voltage (Maximum)		4V

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