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IRHM9130 MOSFET Transistor

The IRHM9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHM9130 transistor as follows.

Circuit diagram symbol of the IRHM9130 transistor

IRHM9130 Transistor Specification

Transistor Code IRHM9130
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO254AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

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