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IRHM7360SE MOSFET Transistor

The IRHM7360SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHM7360SE transistor as follows.

Circuit diagram symbol of the IRHM7360SE transistor

IRHM7360SE Transistor Specification

Transistor Code IRHM7360SE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO254AA
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V

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