IRHM7360 MOSFET Transistor

The IRHM7360 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHM7360 transistor as follows.

IRHM7360 Transistor Specification

Transistor Code		IRHM7360
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		990pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		4V

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