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IRHLNM87Y20 MOSFET Transistor

The IRHLNM87Y20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHLNM87Y20 transistor as follows.

Circuit diagram symbol of the IRHLNM87Y20 transistor

IRHLNM87Y20 Transistor Specification

Transistor Code IRHLNM87Y20
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD-0.2
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 36W
Drain-Source Capacitance 596pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 73nS
Gate-Threshold Voltage (Maximum) 2.3V
Total Gate Charge 18nC

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