IRHLNA77064 MOSFET Transistor

The IRHLNA77064 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHLNA77064 transistor as follows.

IRHLNA77064 Transistor Specification

Transistor Code		IRHLNA77064
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD-2
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		2343pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		151nC

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