IRHLG7970Z4 MOSFET Transistor

The IRHLG7970Z4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHLG7970Z4 transistor as follows.

IRHLG7970Z4 Transistor Specification

Transistor Code		IRHLG7970Z4
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.71A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		39pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		2.8nC

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