IRHLG77110 MOSFET Transistor

The IRHLG77110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHLG77110 transistor as follows.

IRHLG77110 Transistor Specification

Transistor Code		IRHLG77110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		119pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		15nC

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