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IRHLF7970Z4 MOSFET Transistor

The IRHLF7970Z4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHLF7970Z4 transistor as follows.

Circuit diagram symbol of the IRHLF7970Z4 transistor

IRHLF7970Z4 Transistor Specification

Transistor Code IRHLF7970Z4
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-39
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.35Ohm
Power Dissipation (Maximum) PD 5W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 2.8nC

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