IRHG6110 MOSFET Transistor

The IRHG6110 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHG6110 transistor as follows.

IRHG6110 Transistor Specification

Transistor Code		IRHG6110
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11nC

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