IRHG597110 MOSFET Transistor

The IRHG597110 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHG597110 transistor as follows.

IRHG597110 Transistor Specification

Transistor Code		IRHG597110
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.96A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.96Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13.4nC

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