IRHG567110 MOSFET Transistor

The IRHG567110 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHG567110 transistor as follows.

IRHG567110 Transistor Specification

Transistor Code		IRHG567110
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		MO-036AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17nC

UXPython is not the creator or an official representative of the IRHG567110 MOSFET transistor. You can download the official IRHG567110 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in NP-Channel MOSFET

IRHLG77214 MOSFET Transistor IRHG597110 MOSFET Transistor IRFG110 MOSFET Transistor IRHG7110 MOSFET Transistor IRFG5210 MOSFET Transistor IRHLG770Z4 MOSFET Transistor IRHG57110 MOSFET Transistor IRHLG77110 MOSFET Transistor IRHG6110 MOSFET Transistor IRFG9110 MOSFET Transistor IRHLG7970Z4 MOSFET Transistor IRHLG7670Z4 MOSFET Transistor IRFG6110 MOSFET Transistor IRHG9110 MOSFET Transistor IRFG5110 MOSFET Transistor