IRH9250 MOSFET Transistor

The IRH9250 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRH9250 transistor as follows.

IRH9250 Transistor Specification

Transistor Code		IRH9250
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.315Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		240nS
Gate-Threshold Voltage (Maximum)		4V

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