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IRH7250SE MOSFET Transistor

The IRH7250SE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRH7250SE transistor as follows.

Circuit diagram symbol of the IRH7250SE transistor

IRH7250SE Transistor Specification

Transistor Code IRH7250SE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 26A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 990pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 140nS
Gate-Threshold Voltage (Maximum) 4.5V

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