IRFZ34EPBF MOSFET Transistor

The IRFZ34EPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFZ34EPBF transistor as follows.

IRFZ34EPBF Transistor Specification

Transistor Code		IRFZ34EPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30nC

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