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IRFZ14L MOSFET Transistor

The IRFZ14L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFZ14L transistor as follows.

Circuit diagram symbol of the IRFZ14L transistor

IRFZ14L Transistor Specification

Transistor Code IRFZ14L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 43W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 11nC

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