IRFY9140M MOSFET Transistor

The IRFY9140M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY9140M transistor as follows.

IRFY9140M Transistor Specification

Transistor Code		IRFY9140M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		60nC

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