IRFY9130M MOSFET Transistor

The IRFY9130M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY9130M transistor as follows.

IRFY9130M Transistor Specification

Transistor Code		IRFY9130M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	75W
Rise Time		140nS
Total Gate Charge		30nC

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