IRFY9130CM MOSFET Transistor

The IRFY9130CM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY9130CM transistor as follows.

IRFY9130CM Transistor Specification

Transistor Code		IRFY9130CM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30nC

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