IRFY430M MOSFET Transistor

The IRFY430M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY430M transistor as follows.

IRFY430M Transistor Specification

Transistor Code		IRFY430M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29.5nC

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